期刊论文详细信息
Bulletin of Materials Science | |
Etching of GaAs substrates to create As-rich surface | |
关键词: Etching; semi-insulating; XPS spectrum.; | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
Several different cleaning procedures for GaAs (100) substrates are compared using X-ray photoelectron spectroscopy and optical microscopy. This work emphasizes the effect of the last etching step: using either HCl, HF–ethanol (5%) or static deionized water after HCl cleaning. All the procedures except HCl solution (1 : 1) produce an As-rich surface. Also, none of the etchants except HF–ethanol solution produce Ga or As-rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO201902186929063ZK.pdf | 1024KB | download |