Tunable linearity enhancement for 180 nm complementary metal–oxide–semiconductor LNA with active feedback

The Journal of Engineering

Mohammed Nadhim Abbas¹  Farooq Abdulghafoor Khaleel¹ 

[1] Department of Electrical Engineering, Baghdad University, Baghdad, Iraq

关键词: complementary metal-oxide-semiconductor LNA;    derivative superposition method;    feedback transistor;    low-noise amplifier;    noise figure 2.4 dB;    size 180 nm;    active MOS field-effect transistor;    voltage 1.8 V;    noise figure;    ADS2016.01 software;    gain 9.43 dB;    TSMC model files;    power 28.4 mW;    tunable linearity enhancement;    power dissipation;   

DOI  :  10.1049/joe.2017.0067

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

The authors present a tunable linearity improvement of complementary metal–oxide–semiconductor low-noise amplifier (LNA) using derivative superposition method and an active MOS field-effect transistor feedback transistor. The proposed LNA achieves a third-order input intercept point (IIP3) of 21 dBm, 9.43 dB gain, and 2.4 dB minimum noise figure. In addition, the proposed LNA method dissipates 28.4 mW supplied from 1.8 V voltage source. The proposed LNA provides flexibility to tune the power dissipation and linearity according to the work environment. They perform the simulation with keysight ADS2016.01 software utilising 180 nm TSMC model files.

【 授权许可】

CC BY