Millimeter-Wave High-Linear CMOS Low-Noise Amplifier Using Multiple-Gate Transistors

ETRI Journal

关键词: 018 um CMOS;    linearity;    MGTR;    low-noise amplifier;    Millimeter-wave;   

Others  :  1186120
DOI  :  10.4218/etrij.11.0210.0235

【 摘 要 】

A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 um standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point (P1dB) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.

   

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