期刊论文详细信息
IEICE Electronics Express
A general on-wafer noise figure de-embedding technique with gain uncertainty analysis
S. Korakkottil Kunhi Mohd2  O. Sidek2  T. Z. A. Zulkifli1 
[1] RMIC Group, School of Electrical and Electronic Engineering, Universiti Sains Malaysia;Collaborative MicroElectronic Design Excellence Center Universiti Sains Malaysia
关键词: on-wafer characterization;    de-embedding structure;    low-noise amplifier;    noise figure;   
DOI  :  10.1587/elex.7.302
学科分类:电子、光学、磁材料
来源: Denshi Jouhou Tsuushin Gakkai
PDF
【 摘 要 】

References(4)Cited-By(1)This paper reports a general on-wafer noise figure (NF) de-embedding technique with the analysis of two gain definitions. As implemented in this work, all elements involved in NF measurement were determined and classified as a multi-stage network, and the well-known Friis law is applied to correct the noise contributions coming from other stages. With the two gain definitions, the effects of impedance match on NF are investigated. The result shows an NF of 3.80dB obtained with the de-embedding method and 6.06dB without the de-embedding method. This result is for vector measurement using the available gain, which gives 0.18dB improvement in NF as opposed to scalar measurement utilizing the insertion gain. Furthermore, NF was also measured at 5.63dB, 5.76dB, and 4.75dB under three different source impedances, namely, short, open, and load, respectively.

【 授权许可】

Unknown   

【 预 览 】
附件列表
Files Size Format View
RO201911300671999ZK.pdf 311KB PDF download
  文献评价指标  
  下载次数:5次 浏览次数:13次