Programmable ferroelectric tunnel memristor

Frontiers in Physics

Quindeau, Andy¹  Alexe, Marin¹  Hesse, Dietrich¹ 

[1] Max-Planck-Institute of Microstructure Physics, Weinberg 2, Halle, 06120, Saxony Anhalt, Germany

关键词: Memristor;    KAI;    ferroelectric switching;    ferroelectric tunnel junction;    multiferroic oxides;   

DOI  :  10.3389/fphy.2014.00007

学科分类：物理（综合）

来源: Frontiers

【 摘 要 】

We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8])O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

【 授权许可】

CC BY