Investigation of memristor effect on basis of thin-film oxide dielectrics modified by carbon

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Sakharov, Yu.V.^1

Tomsk State University of Control Systems and Radioelectronics (TUSUR), Lenin Str., 40, Tomsk, Russia^1

关键词: Electrophysical properties;    Memristor;    Non-volatile;    Porous film;    Thin film oxides;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012029/pdf
DOI  :  10.1088/1757-899X/498/1/012029

来源: IOP

【 摘 要 】

The regularities of the change of electrophysical properties of memristor structures based on porous films of titanium dioxide are considered at their modification by carbon. It is shown that the introduction of impurity results in the significant change of the electrophysical properties of memristor structures based on porous films of titanium dioxide. The purpose of this paper is to reveal the regularities between the electrophysical properties of elements of non-volatile memristor memory and the phenomena of switching and memory at atmospheric pressure.