Influence of indium doping on the electrical properties of Ge2Sb2Te5 thin films for nonvolatile phase change memory devices

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Lazarenko, P.I.^1 ; Sherchenkov, A.A.^1 ; Kozyukhin, S.A.^2 ; Babich, A.V.^1 ; Nguen, H.P.^3 ; Timoshenkov, S.P.^1 ; Gromov, D.G.^1 ; Yakubov, A.O.^1 ; Terekhov, D.Y.^1

National Research University of Electronic Technology, Zelenograd

124498, Russia^1

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow

11999, Russia^2

Industrial University of Ho Chi Minh City, Ho Chi Minh City, Viet Nam^3

关键词: Concentration dependence;    Crystallization temperature;    Indium doping;    Non-volatile;    Nonmonotonic;    Processing time;    Thermal and electrical properties;    Urbach energy;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012006/pdf
DOI  :  10.1088/1742-6596/690/1/012006

来源: IOP

【 摘 要 】

In this article the influence of different amounts of In (0, 0.5, 1 and 3 wt. %) on the thermal and electrical properties of Ge2Sb2Te5thin films for nonvolatile phase change memory devices is investigated. Crystallization temperature, resistivity, width of the optical band gap, Urbach energy, activation energy and type of conductivity are estimated for all investigated compounds. Storage and data processing times of the PCM cells on the basis of investigated materials were calculated. Nonmonotonic concentration dependences of properties were observed.