Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes

ETRI Journal

关键词: dark current;    junction failure;    reliability;    detectors;    Photodiodes;   

Others  :  1185350
DOI  :  10.4218/etrij.06.0105.0250

【 摘 要 】

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

   

【 参考文献 】

• [1]S.R. Forrest, R.F. Leheny, R.E. Nahory, and M.A. Pollack, "In0.53Ga0.47As Photodiodes with Dark Current Limited by Generation-Recombination and Tunneling," Appl. Phys. Lett., vol. 37, 1980, pp. 322-325.
• [2]T.P. Lee and C.A. Burrus, "Dark Current and Breakdown Characteristics of Dislocation-Free InP Photodiodes," Appl. Phys. Lett., vol. 36, 1980, pp. 587-589.
• [3]A.K. Chin, F.S. Chen, and F. Ermanis, "Failure Mode Analysis of Planar Zinc Diffused In0.53Ga0.47As PIN Photodiodes,’’ J. Appl. Phys., vol. 55, 1984, pp. 1596-1606.
• [4]R.H. Saul and F.S. Chen, "Reliability Assurance for Devices with a Sudden Failure Characteristic," IEEE Electron Device Lett., vol. ELD-4, 1983, pp. 467-468.
• [5]A. Nespola, T. Chau, M.C. Wu, and G. Ghione, "Analysis of Failure Mechanism in Velocity-Matched Distributed Photodiodes," IEE Pro. Optoelectron., vol. 146, 1999, pp. 25-30.
• [6]M.S. Islam, A. Nespola, M. Yeahia, M.C. Wu, D.L. Sivco, and A.Y. Cho, "Correlation Between the Failure Mechanism and Dark Currents of High Power Photodetectors," LEOS 2000 Annual Meeting (Cat. No.00CH37080), vol. 1, 2000, pp. 82-83.
• [7]Y. Tashiro, K. Taguchi, Y. Sugimoto, T. Torikai, and K. Nishida, "Degradation Modes in Planar Structure In0.53Ga0.47As Photodetectors," J. Lightwave Technol., vol. LT-1, 1983, pp. 269-272.
• [8]K.J. Williams and R.D. Esman, "Design Considerations for High-Current Photodetectors," J. Lightwave Technol., vol. 17, 1999, pp. 1443-1454.
• [9]M.S. Islam, T. Jung, T. Itoh, M.C. Wu, A. Nespola, D.L. Sivco, and A.Y. Cho, "High Power and Highly Linear Monolithically Integrated Distributed Balanced Photodectectors," J. Lightwave Technol. vol. 20, 2002, pp. 285-295.
• [10]J.S. Paslaski, P.C. Chen, C.M. Gee, and N. Bar-Chaim, "High Power Microwave Photodiode for Improving Performance of RF Fiber Optic Links," Proc. SPIE, Photon. Radio Freq., vol. 2844, 1996, Denver, CO, pp. 110-119.
• [11]M.S. Islam and M.C. Wu, "Recent Advances and Future Prospects in High-Speed and High-Saturation Current Photodetectors," Proc. SPIE, vol. 5246, 2003, pp. 448-457.
• [12]H. Mawatari, M. Fukuda, K. Kato, T. Takeshita, M. Yada, A. Kozen, and H. Toba, "Reliability of Planar Waveguide Photodiodes for Optical Subscriber Systems," J. Lightwave Technol., vol. 16, 1998, pp. 2428-2434.
• [13]Y. Kuhara, H. Terauchi, and H. Nishizawa, "Reliability of InGaAs/InP Long-Wavelength PIN Photodiodes Passivated with Polyimide Thin Film," J. Lightwave Technol., vol. LT-4, 1986, pp. 933-937.
• [14]H. Sudo and M. Suzuki, "Surface Degradation Mechanism of InP/InGaAs APD’s," J. Lightwave Technol., vol. 6, 1988, pp. 1496-1501.
• [15]J.W. Osenbach and T.L. Evanosky, "Temperature-Humidity-Bias Behavior and Acceleration Model for InP Planar PIN Photodiodes," J. Lightwave Technol., vol. 14, 1996, pp. 1865-1881.
• [16]R.B. Comizzoli, J.W. Osenbach, G.R. Crane, G.A. Peins, D.J. Siconolfi, O.G. Lorimor, and C.C. Chang, "Failure Mechanism of Avalanche Photodiodes in the Presence of Water Vapor," J. Lightwave Technol., vol. 19, 2001, pp. 252-265.
• [17]S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J.C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett., vol. 15,
• [18]S.H. Oh, H.S. Ko, K.S. Kim, J.M. Lee, C.W. Lee, O.K. Kwon, S.G. Park, and M.H. Park, "Fabrication of Butt-Coupled SGDBR Laser Integrated with Semiconductor Optical Amplifier Having a Lateral Tapered Waveguide," ETRI Journal, vol. 27, 2005, pp. 551-556.
• [19]Y.H. Kwon, J.S. Choe, J.H. Kim, K.S. Kim, K.S. Choi, B.S. Choi, and H.G. Yun, "Fabrication of 40Gb/s Front-End Optical Receivers Using Spot-Size Converter Integrated Waveguide Photodiodes," ETRI Journal, vol. 27, 2005, pp. 484-490.
• [20]T. Takeuchi, T. Nakata, M. Tachigori, K. Makita, and K. Taguchi, "Design and Fabrication of a Waveguide Photodiode for 1.55-mm Band Access Receivers," 10th Intern. Conf. on Indium Phosphide and Related Materials, TuP-48, 1998, pp. 262-265.