Vertically Well-Aligned ZnO Nanowires on c-Al2O3 and GaN Substrates by Au Catalyst

ETRI Journal

关键词: HRTEM;    CVD;    GaN;    c-Al2O3;    nanowire;    ZnO;   

Others  :  1185334
DOI  :  10.4218/etrij.06.0206.0138

【 摘 要 】

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-Al2O3 substrates. However, pre-growth annealing of the Au thin layer on c-Al2O3 resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

   

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