Direct Deposition of CVD Diamond Layers on Top of GaN Membranes

Proceedings

Bohumír Zaťko¹  Tibor Izsák¹  Gabriel Vanko¹  Marian Vojs²  Štěpán Potocký³  Alexander Kromka³  Milan Držík⁴  Stephan Kasemann⁵  Johann Zehetner⁵ 

[1] Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 841 04 Bratislava, Slovakia;Institute of Electronics and Photonics, Slovak University of Technology, 841 04 Bratislava, Slovakia;Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Prague, Czech Republic;International Laser Centre, Ilkovičova 3, 841 04 Bratislava, Slovakia;Research Center for Microtechnology, Voralberg University of Applied Sciences, Hochschulstraße 1, 6850 Dornbirn, Austria;

关键词: GaN;    diamond;    CVD;    MEMS;    intrinsic stress;   

DOI  :  10.3390/proceedings2020056035

来源: DOAJ

【 摘 要 】

We present technological issues in the deposition of diamond films on gallium nitride (GaN) membranes. Many wrinkles and thicker diamond layers were observed at the membrane center and poor quality diamond outside the membrane area. The deflection of the membranes was analyzed by a bulging method using white light interferometry. The membrane bending is discussed in the terms of temperature gradient and mismatch of thermal expansion coefficients of materials.

【 授权许可】

Unknown