期刊论文详细信息
ETRI Journal
A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems
关键词: doubler;    amplifier;    77 GHz;    MHEMT;    MMIC;    Automotive radar;   
Others  :  1185287
DOI  :  10.4218/etrij.05.0104.0141
PDF
【 摘 要 】

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 m gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of –16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

【 授权许可】

   

【 预 览 】
附件列表
Files Size Format View
20150520105915434.pdf 1093KB PDF download
【 参考文献 】
  • [1]K. Kamozaki et al., "A 77GHz T/R MMIC Chip Set for Automotive Radar Systems," GaAs IC Symp. Digest, 1997, pp. 275-278.
  • [2]J. Udomoto et al., "A 38/77 GHz MMIC Transmitter Chip Set for Automotive Applications," IEEE MTT-S Digest, 2003, pp. 2229-2232.
  • [3]H. S. Yoon et al., "0.15 mm Gate Length InAlAs/InGaAs Power Metamorphic HEMT on GaAs Substrate with Extremely Low Noise Characteristics," Int’l Conf. IPRM, May 2003, pp. 114-117.
  • [4]K. Shinohara et al., "Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency," Jpn. J. Appl. Phys., vol. 41, Apr. 2002, pp. L437-L439.
  • [5]Y. C. Chou et al., "High Reliability of 0.1 mm InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP Substrate," Int’l Conf. IPRM, May 2001, pp. 618-621.
  • [6]A. Tessmann et al., "A 77GHz GaAs pHEMT Transceiver MMIC for Automotive Sensor Applications," GaAs IC Symp. Digest, 1999, pp. 207-210.
  • [7]H. Kondoh et al., "77 GHz Fully-MMIC Automotive Forward-Looking Radar," GaAs IC Symp. Digest, 1999, pp. 211-214.
  • [8]H. J. Siweris et al., "A Mixed Si and GaAs Chip Set for Millimeter-Wave Automotive Radar Front-Ends," RFIC Symp. Digest, 2000, pp. 191-194.
  • [9]H. J. Siweris et al., "Low-Cost GaAs pHEMT MMIC’s for Millimeter-Wave Sensor Applications," IEEE Trans. MTT, vol. 46, 1998, pp. 2560-2567.
  • [10]H. Y. Chang et al., "A 77-GHz MMIC Power Amplifier for Automotive Radar Applications," IEEE Microwave and Wireless Components Letters, vol. 13, 2003, pp. 143-145.
  • [11]D. C. Caruth et al., "Low-Cost 38 and 77 GHz CPW MMICs Using Ion-Implanted GaAs MESFETs," IEEE MTT-S Digest, vol. 2, 2000, pp. 995-998.
  文献评价指标  
  下载次数:11次 浏览次数:24次