An 85�?120 GHz high-gain and wide-band InP MMIC amplifier

IEICE Electronics Express

Cui Yu-Xing¹  Zhao Zhuo-Bin²  Wang Zhi-Ming²  Lv Xin²  Fu Xing-Chang¹  Hu Zhi-Fu¹  Liu Jun²  Sun Xi-Guo¹ 

[1] Hebei Semiconductor Research Institute;Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology

关键词: InP;    PHEMT;    MMIC;    amplifier;    W-band;    D-band;   

DOI  :  10.1587/elex.12.20150760

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(13)This paper presents the development of an 85�?120 GHz high-gain and wide-band monolithic millimeter-wave integrated circuit (MMIC) amplifier using our own improved 70-nm InP pseudomorphic high electron mobility transistor (PHEMT) with ft = 247 GHz and fmax = 392 GHz. Edge-coupled line is used for DC blocking and radial subs are employed for RF bypass. Shunt RC networks and radial stubs are included in the bias circuitry to maintain amplifier stability. This amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92 GHz and greater than 11.5 dB from 85 to 120 GHz. The 3 dB bandwidth is above 35 GHz with a chip size of 1.6 × 1.1 mm2. To our knowledge, this MMIC amplifier has characteristics of much higher-gain per stage, wider-band and smaller chip size than others at the similar frequency band. The excellent results indicate that this MMIC amplifier has a great potential for pre-amplifier or interstage driving amplifiers applications at W-band or D-band.

【 授权许可】

Unknown