期刊论文详细信息
| Active and Passive Electronic Components | |
| An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices | |
| R. Rmaily1 K. Raïs1 A. El Abbassi1 Y. Amhouche1 | |
| [1] Laboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, Morocco, ucd.ac.ma | |
| 关键词: Saturation velocity; Effective mobility; Substrate current; Critical field; Drain saturation voltage; | |
| Others : 1369698 DOI : 10.1155/2001/49537 |
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| received in 2001-04-01, accepted in 2001-05-15, 发布年份 2001 | |
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【 授权许可】
Copyright © 2001 Hindawi Publishing Corporation 2001
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| Files | Size | Format | View |
|---|---|---|---|
| 049537.pdf | 351KB |  download |
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