The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping

33rd International Conference on the Physics of Semiconductors

Protasov, D.Yu.^1,2 ; Gulyaev, D.V.^1 ; Bakarov, A.K.^1 ; Toropov, A.I.^1 ; Zhuravlev, K.S.^1,3

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Lavrentiev avenue, 13, Novosibirsk

630090, Russia^1

Novosibirsk State Technical University, K.Marx Avenue, 20, Novosibirsk

630073, Russia^2

Novosibirsk State University, Pirogov Street 2, Novosibirsk

630090, Russia^3

关键词: Delta layers;    Donor acceptors;    Effective thickness;    High electric fields;    Mobility enhancement;    Potential barriers;    Real-space transfers;    Saturation velocity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012051/pdf
DOI  :  10.1088/1742-6596/864/1/012051

来源: IOP

【 摘 要 】

The splitting of the delta-layers in the DA-pHEMT heterostructures has resulted in the increase of the spacer's effective thickness and growth of the low-field 2DEG mobility from 4000÷5000 cm2V-1s-1up to 6500 cm2V-1s-1at the temperature of 300 K and 2DEG density of 4.0×1012cm-2. The 2DEG mobility in the δ-splitted DA-pHEMT heterostructures almost coincides with the mobility in standard pHEMT heterostructures, but the 2DEG density in the DA-pHEMT heterostructures is approximately twice higher. The additional potential barrier in the DA-pHEMT heterostructures formed by the acceptors causes the reduction of the real-space transfer effect. Therefore, the drift saturation velocity in these heterostructures is higher than the drift saturation velocity in standard pHEMT heterostructures.