Electrochemical capacitance_voltage measurements and modeling of GaAs nanostructures with delta-doped layers

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Shestakova, L.^1 ; Yakovlev, G.^1 ; Zubkov, V.^1

Department of Micro- and Nanoelectronics, St. Petersburg State Electrotechnical University LETI, Prof. Popov str. 5, St. Petersburg

197376, Russia^1

关键词: Capacitance voltage characteristic;    Concentration distributions;    Delta layers;    Delta-doped layers;    Electrochemical capacitance voltage;    Electrochemical capacitance-voltage profiling;    Semiconductor structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012022/pdf
DOI  :  10.1088/1742-6596/816/1/012022

来源: IOP

【 摘 要 】

The paper presents the results of electrochemical capacitance-voltage profiling and simulation of quantum-sized semiconductor structures with quantum wells and delta-doped layers based on gallium arsenide. The experimental ECV data were obtained by superposition of measured capacitance-voltage characteristics during the gradual etching of the nanostructure. As a result of simulation, the concentration distribution and energy lineups for structures with delta-layers and quantum wells in gallium arsenide were calculated. The results of simulation are in qualitative agreement with the experimental results and data found in literature.