Photovoltaic Detector Based on Type II Heterostructure with Deep AlSb/InAsSb/AlSb Quantum Well in the Active Region for the Mid-Infrared Spectral Range

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Konovalov, G.G.^1 ; Mikhailova, M.P.^1 ; Andreev, I.A.^1 ; Moiseev, K.D.^1 ; Ivanov, E.V.^1 ; Mikhailov, M.Yu.^1 ; Yakovlev, Yu.P.^1

Ioffe Physical Technical Institute, Russian Academy of Sciences, Saint-Petersburg, 194021, Russia^1

关键词: Capacitance voltage characteristic;    Deep quantum well;    Hetero interfaces;    High temperature;    Metal-organic vapor phase epitaxy;    Mid-infrared spectral range;    Negative luminescence;    Photovoltaic detector;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012026/pdf
DOI  :  10.1088/1742-6596/461/1/012026

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Photodetectors for the spectral range 2-4 μm, based on an asymmetric type-II heterostructure p-InAs/AlSb/InAsSb/AlSb/(p, n)-GaSb with a single deep quantum well (QW) or three deep QWs at the heterointerface, have been grown by metal-organic vapor phase epitaxy and analysed. The transport, luminescent, photoelectric, current-voltage, and capacitance-voltage characteristics of these structures have been examined. A high-intensity positive and negative luminescence was observed in the spectral range 3-4 μm at high temperatures (300-400 K). The photosensitivity spectra were in the range 1.2-3.6 μm (T 77 K). Large values of quantum efficiency (η 0.6-0.7), responsivity (Sλ0.9-1.4 A·W1), and detectivity D*λ3.5·1011to 1010cm·Hz1/2·W-1) were obtained at T 77-200 K. The small capacitance of the structures (C 1.5 pF at V -1 V and T 300 K) enabled an estimate of the response time of the photodetector at τ 75 ps, which corresponds to a bandwidth of about 6 GHz. Photodetectors of this kind are promising for heterodyne detection of the emission of quantum-cascade lasers and IR spectroscopy.