Characterization of Defect Traps in SiO2 Thin Films

Active and Passive Electronic Components

Yukio Yasuda²  Shigeaki Zaima³  Akira Sakai²  Hiroya Ikeda²  Mitsuo Sakashita²  Jean-Pierre Charles⁴  Pierre Mialhe¹  Jean-Yves Rosaye² 

[1]Semiconductor Physics, Department of Fundamental Researches, Perpignan University, 52 avenue de Villeneuve, Perpignan Cedex 66860, France, univ-perp.fr

[2]Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-city 464-8603, Japan, nagoya-u.ac.jp

[3]Center for Cooperative Research on Advanced Science and Technology, Nagoya University, Furocho, Chikusa-ku, Nagoya-city 464-8603, Japan, nagoya-u.ac.jp

[4]MOPS-CLOES-SUPELEC, Metz University, 2 rue Edouard Belin, Metz 57070, France, univ-metz.fr

关键词: Defects;    Slow-state traps;    Hysteresis;    C-V characteristics;    MOS capacitor;    Gate oxide;   

Others  :  1369700
DOI  :  10.1155/2001/57872

 received in 2001-04-03, accepted in 2001-05-15,  发布年份 2001

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Copyright © 2001 Hindawi Publishing Corporation 2001