Radiation Effects of Proton Particles in Memory Devices

ETRI Journal

关键词: proton;    memory device;    single event effect;    single event upset;    Radiation effect;   

Others  :  1185611
DOI  :  10.4218/etrij.07.0206.0157

【 摘 要 】

In this letter, we study the impact of single event upsets (SEUs) in space or defense electronic systems which use memory devices such as EEPROM, and SRAM. We built a microcontroller test board to measure the effects of protons on electronic devices at various radiation levels. We tested radiation hardening at beam current, and energy levels, measured the phenomenon of SEUs, and addressed possible reasons for SEUs.

   

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