High-energy heavy ion testing of VLSI devices for single event upsets and latch up

Bulletin of materials science

S R Kulkarni²  M Ravindra¹  R Sandhya¹  G R Joshi¹  S B Umesh¹  R Damle² 

[1] Components Division, ICG, ISRO Satellite Centre, Airport Road, Bangalore 560 017, India$$Components Division, ICG, ISRO Satellite Centre, Airport Road, Bangalore 560 017, IndiaComponents Division, ICG, ISRO Satellite Centre, Airport Road, Bangalore 560 017, India$$;Department of Physics, Bangalore University, Bangalore 560 056, India$$Department of Physics, Bangalore University, Bangalore 560 056, IndiaDepartment of Physics, Bangalore University, Bangalore 560 056, India$$

关键词: High-energy heavy ions;    single event effect;    linear energy threshold;    radiation hardened;    upset and latch up.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Several very large scale integrated (VLSI) devices which are not available in radiation hardened version are still required to be used in spacecraft systems. Thus these components need to be tested for highenergy heavy ion irradiation to find out their tolerance and suitability in specific space applications. This paper describes the high-energy heavy ion radiation testing of VLSI devices for single event upset (SEU) and single event latch up (SEL). The experimental set up employed to produce low flux of heavy ions viz. silicon (Si), and silver (Ag), for studying single event effects (SEE) is briefly described. The heavy ion testing of a few VLSI devices is performed in the general purpose scattering chamber of the Pelletron facility, available at Nuclear Science Centre, New Delhi. The test results with respect to SEU and SEL are discussed.

【 授权许可】

Unknown