Collection of charge in NMOS from single event effect

IEICE Electronics Express

Li Liu²  Qiwei Song²  Liang Chen²  Wenna Song²  Donglin Wang²  Fujiang Lin¹  Jingqiu Wang¹ 

[1] School of Information Science and Technology, University of Science and Technology of China;National ASIC Design Engineering Center, Institute of Automation, Chinese Academy of Sciences

关键词: single event effect;    ultra deep sub-micron;    double exponential transient current model;    multi-dimensional;   

DOI  :  10.1587/elex.13.20160014

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.

【 授权许可】

Unknown