Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

ETRI Journal

关键词: contact resistance;    porous silicon micromachining;    probe beam;    Silicon probe card;   

Others  :  1185261
DOI  :  10.4218/etrij.05.0104.0080

【 摘 要 】

We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of 5 m, a width of 50 m, and a length of 800 m. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was 170 m, and an annealing process was performed for 20 min at 500C. The contact resistance of the newly fabricated probe card was less than 2 , and its lifetime was more than 20,000 turns.

   

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