Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures

Advanced Science

Hanul Kim¹  Dongmok Whang²  Yewon Kim³  A. Venkatesan³  Jihoon Kim³  Gil‐Ho Kim⁴ 

[1] Samsung‐SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea;Samsung‐SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea;School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea;School of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea;School of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea;Samsung‐SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea;

关键词: contact resistance;    monolayer;    tunneling;    vdW heterostructures;    WS/MoTe;   

DOI  :  10.1002/advs.202100102

来源: Wiley

【 授权许可】

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