Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

Advanced Science

Sung Jin Kim¹  Paras N. Prasad²  Si Chen³  Yonghong Zeng³  Yu‐Jia Zeng³  Zhinan Guo³  Rui Cao³  Jinlai Zhao³  Dianyuan Fan³  Feng Zhang³  Huide Wang³  Shan Gao³  Haiguo Hu³  Fanxu Meng³  Han Zhang³ 

[1] Department of Electrical and Computer Engineering University of Miami Coral Gables FL 33146 USA;Institute for Lasers, Photonics, and Biophotonics and Department of Chemistry University at Buffalo The State University of New York Buffalo NY 14260 USA;Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 China;

关键词: black phosphorus;    graphene;    interlayer recombination;    sensitive photodetectors;    vdW heterostructures;   

DOI  :  10.1002/advs.202100503

来源: DOAJ

【 摘 要 】

Abstract Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first‐time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe‐based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high‐performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.

【 授权许可】

Unknown