Data Randomization Scheme for Endurance Enhancement and Interference Mitigation of Multilevel Flash Memory Devices

ETRI Journal

关键词: pseudorandom generator;    interference;    endurance;    raw bit error rate;    reliability;    Flash memory;   

Others  :  1196818
DOI  :  10.4218/etrij.13.0212.0273

【 摘 要 】

In this letter, we propose a data randomization scheme for endurance and interference mitigation of deeply-scaled multilevel flash memory. We address the relationships between data patterns and the raw bit error rate. An on-chip pseudorandom generator composed of an address-based seed location decoder is developed and evaluated with respect to uniformity. Experiments performed with 2x-nm and 4x-nm NAND flash memory devices illustrate the effectiveness of our scheme. The results show that the error rate is reduced up to 86% compared to that of a conventional cycling scheme. Accordingly, the endurance phenomenon can be mitigated through analysis of interference that causes tech shrinkage.

   

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