Some of Electrical and Detection properties of nano silver oxide

International Conference on Materials Engineering and Science

Dawood, Marwa A.^1 ; Fakhri, Makram A.^2,3 ; Khalid, Farah G.^4 ; Hassan, Omer S.^2 ; Abdulla, Mustafa S.^2 ; Ahmed, Abdulrahman A.^2 ; Abduljabar, Saad A.^2

Al-lsra'a University College Computer Techniques Engineering, University of Technology, Baghdad

10066, Iraq^1

Laser and Optoelectronic Department, University of Technology, Baghdad

10066, Iraq^2

Institute of Nano Electronic Engineering, University Malaysia Perlis, Kangar, Perlis

01000, Malaysia^3

Collage of Agriculture, University of Baghdad, Iraq^4

关键词: Ag2O;    Annealing temperatures;    Detector parameters;    N type silicon;    Near-IR;    Reactive pulse laser deposition;    RPLD;    Spectral responsivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/454/1/012161/pdf
DOI  :  10.1088/1757-899X/454/1/012161

来源: IOP

【 摘 要 】

Micro and Nano Ag2O3 thin films have been deposited using the Reactive Pulse Laser Deposition (RPLD) method. N-type silicon wafer was used as substrates. The prepared films were annealed at (400 -600) °C to produce the oxide films. Spectral Responsivity had been sensed more optically for green (560nm) and near IR (840nm). Response time reveals an enhancement with annealing temperatures.