An Artificial Bio-Synapse Based on Ag/a-Si:Ag/a-Si/X Memristors With Different Bottom Electrode X

2018 3rd International Conference on Insulating Materials, Material Application and Electrical Engineering

材料科学;无线电电子学;电工学

Chen, Yicheng^1 ; Li, Dongyang^1 ; Liu, Cheng^1 ; Jiang, Xiangdong^1 ; Li, Wei^1,2

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China^1

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China^2

关键词: Bottom electrodes;    Cosputtering;    Dielectric layer;    Long term memory;    MEMS process;    Response current s;    Short term memory;    Voltage sweep;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/452/4/042160/pdf
DOI  :  10.1088/1757-899X/452/4/042160

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this paper, memristors with three different bottom electrodes as p-Si, Ag and ITO have been fabricated successfully. The memristor is designed as Ag/a-Si:Ag/a-Si/X, in which X refers to p-Si, Ag or ITO. The dielectric layers of a-Si:Ag/a-Si are fabricated by co-sputtering and the final device is completed by standard MEMS processes. The I-V curves, voltage sweeps and response currents, short-term memory (STM) to long-term memory (LTM), and the stability of memristors are studied extensively to mimic the synaptic behavior. It is indicated that the bottom electrode of the Ag/a-Si:Ag/a-Si/X memristors has an obviously influence on the performance of the decivce, and it is suggested that an optimized structural design is needed when a memristive layer is already chosen.