会议论文详细信息
19th International School on Condensed Matter Physics: Advances in Nanostructured Condensed Matter: Research and Innovations
Effect of oxygen concentration and metal electrode on the resistive switching in MIM capacitors with transition metal oxides
Spassov, D.^1 ; Paskaleva, A.^1 ; Fröhlich, K.^2 ; Ivanov, Tz.^1
Institute of Solid State Physics, Bulgarian Academy of Sciences, TzarigradskoChaussee 72, Sofia
1734, Bulgaria^1
Institute of Electrical Engineering, SAS, Dubravska cesta 9, Bratislava
841 04, Slovakia^2
关键词: Bottom electrodes;    Deposition conditions;    Deposition process;    Deposition regimes;    Oxygen concentrations;    Resistive switching;    Resistive switching behaviors;    Switching voltages;   
Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/794/1/012016/pdf
DOI  :  10.1088/1742-6596/794/1/012016
来源: IOP
PDF
【 摘 要 】

The influence of the oxygen content in the dielectric layer and the effect of the bottom electrode on the resistive switching in Au/Pt/TaOx/TiN and Au/Pt/TaOx/Ta structures have been studied. The sputtered TaOxlayers have been prepared by using oxygen concentrations of 10 or 7% O2in the Ar+O2working ambient as well as by a gradual variation of the O2content in the deposition process from 5 to 10%. Two deposition regimes for TiN electrodes have been investigated: reactive sputtering of Ti target in Ar+N2ambient, and sputtering of TiN target in pure Ar. Bipolar resistive switching behavior is observed in all examined structures. It is demonstrated that the resistive switching effect is affected by the oxygen content in the working ambient as well as by the type and the deposition conditions of the bottom electrodes. Most stable effect, with ON/OFF ratio above 100 is obtained in TaOxdeposited with variable O2content in the ambient. The obtained switching voltage between the high resistive and low resistive state (SET) is about -1.5 V and the reverse changeover (RESET) is ∼2 V. A well pronounced resistive switching is achieved with reactively sputtered TiN while for the other bottom electrodes the effect is negligible.

【 预 览 】
附件列表
Files Size Format View
Effect of oxygen concentration and metal electrode on the resistive switching in MIM capacitors with transition metal oxides 1084KB PDF download
  文献评价指标  
  下载次数:6次 浏览次数:44次