Switching current shape analysis in LBGO single crystals

Scanning Probe Microscopy 2018

Akhmatkhanov, A.R.^1 ; Plashinnov, K.S.^1 ; Milov, E.V.^2 ; Shneidshtein, I.V.^2 ; Turygin, A.P.^1 ; Shur, V Ya^1

School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg

620000, Russia^1

Faculty of Physics, Lomonosov Moscow State University, Moscow

119991, Russia^2

关键词: Domain structure;    External fields;    High spatial resolution;    Partial polarization;    Piezoresponse force microscopy;    Polarization reversals;    Switching currents;    Switching process;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/443/1/012001/pdf
DOI  :  10.1088/1757-899X/443/1/012001

来源: IOP

【 摘 要 】

The switching current shape during polarization reversal at room temperature by rectangular field pulses was studied. The activation-type external field dependence of switching time was revealed. The domain structure was imaged after partial polarization reversal by piezoresponse force microscopy with high-spatial resolution and the main geometrical parameters were extracted. The switching currents for complete polarization reversal in field range from 15 to 20 kV/mm were fitted by modified Kolmogorov-Avrami formula taking into account the geometrical parameters of the domain structure. The obtained excellent fitting of the switching current confirmed the proposed model of the switching process.