The preparation and the photoelectric characteristics of graphene/MoSe2 heterojunction

6th Annual International Conference on Material Science and Engineering

Xu, Cheng^1 ; Peng, Tao^1 ; Guan, Mingyan^1 ; Zhang, Qiang^1 ; Ma, Xiying^1

School of Mathematics and Physics, Suzhou University of Science and Technology, Kerui Road 1 in Gaoxin, Suzhou, Jiangsu

215011, China^1

关键词: Absorption property;    Chemical vapour deposition;    Graphene layers;    Optical and electrical properties;    Parallel nanowires;    Photocurrent generations;    Photoelectric characteristics;    Strong orientation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/397/1/012055/pdf
DOI  :  10.1088/1757-899X/397/1/012055

来源: IOP

【 摘 要 】

The paper presents the preparation and optoelectronics characteristics of grapheme/molybdenum selenide (MoSe2) heterojunction.MoSe2 films was deposited on Si substratesusing used MoSe2 powder as a raw material by a chemical vapour deposition (CVD) method, and then the graphene/MoSe2 heterojunction was formed by grown a graphene layer on the MoSe2 film using methane (CH4) as a raw material. The prepared MoSe2 films were consisted of many nanowires about 2 nm in diameter and 7 nm in length perpendicular to the surface observed by an Atomic force microscopy (AFM), while many small graphene pieces were formed and dispersed on MoSe2 film surface. Additionally, we found that the growth of MoSe2 film has a strong orientation growth in the (400) crystal plane, which consistent with the MoSe2 film composed of many parallel nanowires in the AFM picture. Moreover, we found that the graphene/MoSe2 heterojunction has good absorption properties for visible light and has a significant photocurrent generation under illumination, indicating that the graphene/MoSe2 heterojunction has excellent optical and electrical properties and has great potential for application in the field of optoelectronic devices.