Alternative Spin-On-Glass (SoG) material characterization For Deep-Submicron (<0.35 um) soft reflow fabrication process

6th International Conference on Nanomaterials and Materials Engineering

Packeer, F.^1 ; Zawawi, M.A.M.^1 ; Hashim, N.Z.I.^1 ; Noh, N.M.^1 ; Jubadi, W.M.^2 ; Missous, M.^3

School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang

14300, Malaysia^1

Department of Electronics, Faculty of Electrical and Electronic Engineering, University Tun Hussein Onn Malaysia, Parit Raja, Johor, Batu Pahat

86400, Malaysia^2

School of Electrical and Electronic Engineering, University of Manchester, Sackville Street, Manchester

M13 9PL, United Kingdom^3

关键词: Alternative materials;    Deposition thickness;    e-Beam lithography;    Fabrication process;    Material characterizations;    Mechanically stable;    Plasma enhanced chemical vapour deposition;    University of Manchester;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/380/1/012005/pdf
DOI  :  10.1088/1757-899X/380/1/012005

来源: IOP

【 摘 要 】

Currently a submicron soft reflow process developed in University of Manchester uses silicon nitride (Si3N4) as the hard mask layer to support the T-Gate structure of pHEMTs in order to make it mechanically stable. However, an alternative material known as Spin-on-Glass (SoG) is introduced to replace Si3N4, offering shorter processing time and consequently, a much simpler and more cost-effective alternative to the e-beam lithography of nanometre-scale gate length transistors. The SoG deposition through plasma-enhanced chemical vapour deposition process requires only 30 minutes to complete, as opposed to the one-day process of depositing Si3N4. In this study, the SoG material used is Silicafilm, and the minimum deposition thickness achieved is 138 nm, enabling 150-nm gate length devices to be fabricated. The SoG is also successfully etched at very low power and pressure (20 W and