Dry e-beam etching of resist for optics

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Rogozhin, A.^1 ; Bruk, M.^1,2 ; Zhikharev, E.^1 ; Streltsov, D.^3 ; Spirin, A.^2 ; Hramchihina, J.^1,4

Institute of Physics and Technology of RAS, Moscow

117218, Russia^1

L.Ya. Karpov Institute of Physical Chemistry, Moscow

105064, Russia^2

Enikolopov Institute of Synthetic Polymer Materials of RAS, Moscow

117393, Russia^3

Moscow Institute of Physics and Technology, Moscow

141700, Russia^4

关键词: 3D Structure;    Binary gratings;    e-Beam lithography;    E-beams;    Exposure-time;    Gray scale;    Planar photonic crystal;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012115/pdf
DOI  :  10.1088/1742-6596/741/1/012115

来源: IOP

【 摘 要 】

Method of dry e-beam etching of resist (DEBER) is described. It appears that the method could be extremely useful for formation of wide range of structures for optics and optoelectronics. It is relatively simple to form diffraction or binary gratings, some diffractive optical elements (DOE), 3D structures or planar photonic crystals. Method could be realised in any focused e-beam induced process (FEBIP) system or in e-beam lithographer with minor modifications. DEBER method is significantly more productive than standard or grayscale e- beam lithography. Typical exposure time for 3x3.9 mm2area is about 10-100 s. Examples of structures formed by the DEBER method that could be used in optoelectronics are presented.