Development of a Post-CMOS Compatible Nanoporous Thin Film layer Based on Al2O3

International Conference on Nanomaterials and Biomaterials 2017

材料科学;物理学;生物科学

Dogan, Ö.^1 ; Buschhausen, A.^2 ; Walk, C.^1 ; Mokwa, W.^3 ; Vogt, H.^4

Fraunhofer Institute for Microelectronic Circuits and Systems, Duisburg

47057, Germany^1

Department of Microelectronics, University of Applied Sciences, Düsseldorf

40476, Germany^2

Department of Materials in Electrical Engineering 1, RWTH Aachen University, Aachen

52074, Germany^3

Department of Electronic Components and Circuits, University of Duisburg-Essen, Duisburg

47057, Germany^4

关键词: Application fields;    Deposition cycles;    High resolution;    Island growth;    Nano-porous surfaces;    Nanoporous thin films;    Porous alumina;    Porous surface;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/350/1/012001/pdf
DOI  :  10.1088/1757-899X/350/1/012001

来源: IOP

【 摘 要 】

Porous alumina is a popular material with numerous application fields. A post-CMOS compatible process chain for the fabrication of nanoporous surface based on Al2O3 by atomic layer deposition (ALD) is presented. By alternately applying small numbers of ALD cycles for Al2O3 and ZnO, a homogenous composite was accomplished, for which the principle of island growth of ALD materials at few deposition cycle numbers was utilised. By selective texture-etching of ZnO content via hydrofluoric acid (HF) in vaporous phase at 40 °C and 10.67 mbar, a porous surface of the etch resistant Al2O3 could be achieved. TOF-SIMS investigations verified the composition of ALD composite, whereas AFM and high resolution SEM images characterised the topographies of pre- and post-etched samples. Pores with opening diameters of up to 15 nm could be detected on the surface after vaporous HF treatment for 2 minutes. The amount of pores increased after an etching time of 5 minutes.