Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

4th International Conference on Advanced Engineering and Technology

Oh, Munsik^1 ; Kang, Jae-Wook^2 ; Kim, Hyunsoo^1

School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk

561-756, Korea, Republic of^1

School of Flexible and Printable Electronics, Polymer Materials Fusion Research Center, Chonbuk National University, Jeonju, Chonbuk

561-756, Korea, Republic of^2

关键词: Current voltage;    Joule heating effect;    Light emitting diode (LEDs);    Silver nanowires;    Specific contact resistances;    Temperature dependence;    Transmission line modeling;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/317/1/012066/pdf
DOI  :  10.1088/1757-899X/317/1/012066

来源: IOP

【 摘 要 】

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρsc) of 10-1∼10-4 Ω•cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρsc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.