Self-heating process influence on efficiency of luminescence of nitride-based heterostructures

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Menkovich, E.A.^1 ; Tarasov, S.A.^1 ; Lamkin, I.A.^1 ; Kurin, S.Yu.^2 ; Antipov, A.A.^2 ; Roenkov, A.D.^2 ; Barash, I.S.^2 ; Helava, H.I.^2,3 ; Makarov, Yu.N.^2,3

Saint-Petersburg Electrotechnical University LETI, Prof. Popova 5, St.-Petersburg 197376, Russia^1

GaN-Crystals Ltd., 27 Engels Ave, St.-Petersburg 194156, Russia^2

Nitride Crystals Inc., 181 E Industry Ct Ste B, Deer Park, NY 11729, United States^3

关键词: Active Layer;    Current values;    Density of state;    Light emitting diode (LEDs);    Self-heating;    Shockley theory;    Theoretical calculations;    Wallplug efficiency;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012027/pdf
DOI  :  10.1088/1742-6596/461/1/012027

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

In this paper we report on dependence of the temperature of active layers (ALs) of heterostructures of light-emitting diodes (LEDs) based on AlGaN (UV LEDs) and InGaN (blue LEDs) on various current values (up to 150 mA). It is shown that the heating of the heterostructures is directly related to the concentration of defects. UV LEDs are characterized by a higher temperature than blue LEDs, they also demonstrate a lower wall-plug efficiency (WPE) (about 1.5% at 20 mA). The WPE of blue LEDs with and without the superlattice are 15% and 18%, respectively. To verify the accuracy of the performed measurements the theoretical calculation of the AL temperature according to Van Roosbroeck-Shockley theory and the model of 2D-combined density of states is carried out.