Study of the field emission graphene/SiC nanostructures using scanning probe microscopy

Scanning Probe Microscopy 2017

Jityaev, I.L.^1 ; Svetlichnyi, A.M.^1 ; Kolomiytsev, A.S.^1 ; Volkov, Yu E.^2 ; Polyakova, V.V.^1 ; Ageev, O.A.^1

Southern Federal University, Research and Educational Center Nanotechnology, Taganrog

347922, Russia^1

North Caucasus Federal University, Institute of Electric Power Engineering, Electronics and Nano-technologies, Stavropol

355029, Russia^2

关键词: Electrical characteristic;    Field emission property;    Interelectrode distance;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/256/1/012021/pdf
DOI  :  10.1088/1757-899X/256/1/012021

来源: IOP

【 摘 要 】

We investigated the topology and electrical characteristics of the field emission graphene/SiC nanostructures using scanning probe microscopy. The effect of design of graphene/SiC nanostructures on field emission properties was estimated. The current-voltage characteristics were measured at different rounding-off radii of the emitting top and the interelectrode distances.