Planar nanosized field emission cathodes on the basis of graphene/semi-insulating silicon carbide fabricated by focused ion beam

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Jityaev, L.^1 ; Ageev, O.A.^1 ; Svetlichnyi, A.M.^1 ; Kolomiytsev, A.S.^1 ; Spiridonov, O.B.^2

Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering, Taganrog

347922, Russia^1

Southern Federal University, Scientific and Design Bureau of Modelling and Controlling Systems, Taganrog

347928, Russia^2

关键词: Current voltage measurement;    Field emission property;    In-vacuum;    Interelectrode distance;    Planar graphene;    Semi-insulating;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012011/pdf
DOI  :  10.1088/1742-6596/741/1/012011

来源: IOP

【 摘 要 】

We investigate the field emission properties of planar graphene structures with nanosized interelectrode distance. The graphene was obtained by thermal decomposition of silicon carbide in vacuum. Planar field emission structures on the basis of graphene on semiinsulating SiC were fabricated by using focused ion beam. We have performed current-voltage measurement on graphene/SiC field emission cathodes. The planar field emission structures showed a threshold voltage less than 1 V.