Influence of Annealing Temperature on Surface Morphological and Electrical Properties of Aluminum Thin Film on Glass Substrate by Vacuum Thermal Evaporator

International Research and Innovation Summit 2017

Wibowo, K.M.^1 ; Sahdan, M.Z.^1 ; Asmah, M.T.^1 ; Saim, H.^1 ; Adriyanto, F.^2 ; Suyitno^3 ; Hadi, S.^3

Microelectronics and Nanotechnology Shamsuddin Research Center (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, Johor, Batu Pahatap 86400, Malaysia^1

Department of Electrical Engineering, Sebelas Maret University, Jl. Ir. Sutami No. 36A, Kentingan, Surakarta

57126, Indonesia^2

Department of Mechanical Engineering, Sebelas Maret University, Jl. Ir. Sutami No. 36A, Kentingan, Surakarta

57126, Indonesia^3

关键词: Aluminum thin films;    Annealing temperatures;    Field emission scanning electron microscopes;    Four point probe;    Glass substrates;    Structural and electrical properties;    Thermal evaporator;    Thermal vacuum;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/226/1/012180/pdf
DOI  :  10.1088/1757-899X/226/1/012180

来源: IOP

【 摘 要 】

This paper explains the effects of the annealing temperature on structural and electrical properties of Aluminum (Al) thin films. Al thin films were deposited on glass substrate by thermal vacuum evaporator. The films were then annealed at 100°, 200°, 300°, 400°, and 500°C for 1 hour. The surface morphology of Al films after annealing were characterized using atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). The electrical properties were characterized using four point probe. From the results of this experiment, the roughness of Al films gradually decrease from 8.5 nm (before annealing) to 7.7 nm and the grain size gradually increase from 127 nm to 145 nm, when the temperature of annealing increased. The resistivity of the films was also decreased from 2.32 x 10-5ohm.cm to 1.9 x 10-5ohm.cm when the samples were annealed from 100° to -5ohm.cm.