The application of the Methods of Cathodoluminescence and Photoluminescence for Non-destructive Testing of AlGaN Heterostructures

5th International Conference: Modern Technologies For Non-Destructive Testing

材料科学;物理学

Kontsevoy, Y.A.^1 ; Pevtsov, E. Ph^2 ; Khmelnitskiy, R.A.^3 ; Kolkovskiy, Y.V.^1 ; Gruzdov, V.V.^1 ; Malykhin, S.A.^4

PULSAR S and PE, JSC, Moscow, Russia^1

Center of Integrated Circuits, Nanoelectronics Devices and Microsystems, Moscow Technological University (MIREA), Russia^2

P.N. Lebedev Physical Institute, Russian Academy of Sciences Moscow, Russia^3

Faculty of Physics, M.V. Lomonosov Moscow State University, Russia^4

关键词: AlGaN/GaN heterostructures;    Cathodoluminescence spectra;    Intensity distribution;    Microwave transistors;    Non destructive testing;    Sapphire substrates;    Wafer surface;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/189/1/012020/pdf
DOI  :  10.1088/1757-899X/189/1/012020

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

This paper examines cathodoluminescence spectra of samples on sapphire substrates to develop methods of non-destructive testing of wafers with AlGaN/GaN heterostructures. It has been determined that the cathodoluminescence peak of AlGaN compound was demonstrated for decreased energy of excitation electrons (at 0.5 eV and 1 keV) only. Cathodoluminescence peak of AlN compound with energy of 6.15 eV was demonstrated at any excitation energy of 0.5 to 6.15 eV. It has been demonstrated that cathodoluminescence spectrum analysis allowed determining aluminum percentage in AlGaN, which was essential for inward testing of wafers for microwave transistors production. Data on the intensity distribution of "yellow" photoluminescence over the wafer surface has been obtained, and it has been demonstrated that these measurements were a prospective method of non-destructive testing to sorting wafers by defects.