Focused Ion Beam Methods for Research and Control of HEMT Fabrication

5th International Conference: Modern Technologies For Non-Destructive Testing

材料科学;物理学

Pevtsov, E. Ph^1 ; Bespalov, A.V.^2 ; Demenkova, T.A.^3 ; Luchnikov, P.A.^3

Center of Integrated Circuits, Nanoelectronics Devices and Microsystems, Moscow Technological University (MIREA), Moscow, Russia^1

Nanocentre, Moscow Technological University (MIREA), Moscow, Russia^2

Moscow Technological University (MIREA), Moscow, Russia^3

关键词: Electronic microscopy;    Ion-beam spraying;    Microwave transistors;    Nanodimensional;    Technological operations;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/189/1/012033/pdf
DOI  :  10.1088/1757-899X/189/1/012033

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.