Simulation of characteristics of microwave transistors with AlGaN heterostructures

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Pevtsov, E.Ph.^1 ; Demenkova, T.A.^1 ; Indrishenok, V.I.^1 ; Varlamov, N.V.^2

Moscow Technological University (MIREA), Prospekt Vernadskogo 78, Moscow

119454, Russia^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^2

关键词: AlGaN/gaN;    Density of electrons;    Electrical characteristic;    Electrical polarization;    Electrostatic potentials;    Free electron;    Microwave transistors;    Transport process;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012040/pdf
DOI  :  10.1088/1757-899X/498/1/012040

来源: IOP

【 摘 要 】

In work results of researches in the area of simulation of electrical characteristics of the AlGaN/GaN field-effect transistor are provided. The considerable difference of transport processes in case of the strong and feeble electrical polarization is shown. The role of capture of centers in volume of a buffer layer GaN is analyzed and it is shown that deep interruptions can influence considerably on distribution of electrostatic potential and density of electrons in a buffer layer. In case of high concentration of interruptions there is a sharp lowering of density of the free electrons with increase of distance from the channel, the current density in the depth of a buffer layer decreases.