Analysis of flow field characteristics in IC equipment chamber based on orthogonal design

1st International Conference on New Material and Chemical Industry

材料科学;化学工业

Liu, W.F.^1 ; Yang, Y.Y.^1 ; Wang, C.N.^1

School of Engineering and Technology, China University of Geosciences (Beijing), Beijing

10083, China^1

关键词: Commercial software;    Evaluation criteria;    Flow field characteristics;    Plasma enhanced chemical vapor depositions (PE CVD);    Pressure and temperature;    Processing chambers;    Processing condition;    Velocity difference;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/167/1/012031/pdf
DOI  :  10.1088/1757-899X/167/1/012031

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

This paper aims to study the influence of the configuration of processing chamber as a part of IC equipment on flow field characteristics. Four parameters, including chamber height, chamber diameter, inlet mass flow rate and outlet area, are arranged using orthogonally design method to study their influence on flow distribution in the processing chamber with the commercial software-Fluent. The velocity, pressure and temperature distribution above the holder were analysed respectively. The velocity difference value of the gas flow above the holder is defined as the evaluation criteria to evaluate the uniformity of the gas flow. The quantitative relationship between key parameters and the uniformity of gas flow was found through analysis of experimental results. According to our study, the chamber height is the most significant factor, and then follows the outlet area, chamber diameter and inlet mass flow rate. This research can provide insights into the study and design of configuration of etcher, plasma enhanced chemical vapor deposition (PECVD) equipment, and other systems with similar configuration and processing condition.