Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Lebedev, E.A.^2 ; Kitsyuk, E.P.^1 ; Gavrilin, I.M.^2 ; Gromov, D.G.^2 ; Gruzdev, N.E.^2 ; Gavrilov, S.A.^2 ; Dronov, A.A.^2 ; Pavlov, A.A.^3

Scientific Manufacturing Complex Technological Centre, Bld. 5, Pas. 4806, Zelenograd, Moscow

124498, Russia^1

National Research University of Electronic Technology, Bld. 5, Pas. 4806, Zelenograd, Moscow

124498, Russia^2

Institute of Nanotechnologies of Microelectronics Russian Academy of Sciences, Leninsky Prospekt, 32A, Moscow

119991, Russia^3

关键词: Deposited oxides;    Fabrication Technologies;    Plasma enhanced chemical vapor depositions (PE CVD);    Specific capacities;    Successive ionic layer adsorption and reactions;    Thin layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012092/pdf
DOI  :  10.1088/1742-6596/643/1/012092

来源: IOP

【 摘 要 】

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.