Impact of recombination on heavy ion induced single event upset cross-section

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Zemtsov, K.S.^1 ; Galimov, A.M.^1 ; Gorchichko, M.E.^1 ; Elushov, I.V.^1

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Charge-yield;    Feature sizes;    Linear energy transfer;    Nano scale;    Single event upset cross sections;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012040/pdf
DOI  :  10.1088/1757-899X/151/1/012040

来源: IOP

【 摘 要 】

The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET.