Using ionization response maps for SET characterisation in UHF mixers

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Savchenkov, D.V.^1 ; Kuznetsov, A.G.^2

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

Specialized Electronic Systems, Kashirskoe shosse 31, Moscow

115409, Russia^2

关键词: Chip areas;    Data points;    Laser energies;    Laser test;    Linear energy transfer;    Non-uniformities;    Single event transients;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012039/pdf
DOI  :  10.1088/1757-899X/151/1/012039

来源: IOP

【 摘 要 】

SEE sensitivity of integrated circuits is characterized by their SEE cross-section vs. linear energy transfer dependences- σ(LET) which are obtained through ion tests. Often those σ(LET) dependencies have such few data points that it's much trouble to approximate them correctly. In those cases σ(LET) can be complemented with SEE cross-section vs. laser energy σ(J) obtained from laser tests. At the same time, σ(J) rarely follow exactly the shape of σ(LET) due to the metallization non-uniformly over chip area. Nevertheless, σ(J) can be corrected against this non-uniformity by examining the ionization response maps ΔU(x, y). In this work we demonstrate that such corrected σ(J) correlates better with σ(LET) by the example of single event transients (SET) in two types of UHF mixers.