Parametric investigation of substrate temperatures on the properties of Zinc oxide deposited over a flexible polymeric substrate via spray technique

International Conference on Advances in Materials and Manufacturing Applications 2016

Rajagopalan, P.^1 ; Gagrani, Rohit^2 ; Nakamura, Daisuke^3 ; Okada, Tatsuo^3 ; Singh, Vipul^4 ; Palani, I.A.^1,2

Centre for Material Science and Engineering, IIT Indore, Indore, India^1

Mechatronics and Instrumentation Lab, Department of Mechanical Engineering, IIT Indore, Indore, India^2

Department of Electrical and Electronic Systems Engineering, Kyushu University, Kyushu, Japan^3

Molecular and Nano-electronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, India^4

关键词: Constant temperature;    Flexible polymeric substrates;    IV characterization;    Large-area deposition;    Morphology changes;    Parametric investigations;    Spray-pyrolysis techniques;    Substrate temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/149/1/012069/pdf
DOI  :  10.1088/1757-899X/149/1/012069

来源: IOP

【 摘 要 】

Here we report the influence of substrate temperature (300-500 °C) on the deposition and growth of ZnO over a Flexible polyimide film. Owing to its simplicity, large area deposition capability and Cost effectivity Spray Pyrolysis technique was used. We have modified the conventional process of Spray pyrolysis by spraying for shorter durations and repeating the process which in turn reduced the Island formation of ZnO. Moreover, this technique helped in maintaining the constant temperature and uniformity during the deposition as prolonged spraying reduces the temperature of the heating plate drastically. Photoluminescence (PL) reveals that at 350 and 400° C the defect have reduced. XRD reveals the crystallinity and Impurities present. FE-SEM reveals the structure morphology changes with the change in the substrate temperature. TGA was done to ensure that substrate does not undergoes dissociation at high temperature. It was observed at the film deposited at 400 °C was found to be more uniform, defect free and crystalline. Hence, IV characterization of the film deposited at 400 °C was done which showed good rectification behaviour of the Schottky diodes.