Stability of the GaAs based Hall sensors irradiated by gamma quanta

International Scientific Conference on "Radiation-Thermal Effects and Processes in Inorganic Materials"

材料科学;物理学

Gradoboev, A.V.^1,2 ; Karlova, G.F.^1

Tomsk Polytechnic University, 30, Lenin Ave., Tomsk

634050, Russia^1

Joint-Stock Company Research Institute of Semiconductor Devices, Tomsk, Russia^2

关键词: Carrier transmission;    Deep level centers;    Electron concentration;    Finite thickness;    Noise properties;    Research methodologies;    Stabilization effects;    Volt-ampere characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/81/1/012027/pdf
DOI  :  10.1088/1757-899X/81/1/012027

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The present work is aimed at investigation of the stability of the GaAsbased Hall sensors (pickups) to irradiation by gamma quanta. The examined objects are the gallium arsenide based Hall sensors manufactured on thin active layers by the methods of vaporphase epitaxy (VPE), molecular beam epitaxy, and ion implantation. Our research methodology involves measurements of the volt-ampere characteristics (VACs) of all sensors for different values of the supply voltage polarity and electron concentration and mobility by the Van-der- Pau method as well as investigations of the noise properties of the sensors before and after irradiation. The sensors are irradiated by gamma quanta of Co60at room temperature in the passive mode, that is, without imposition of an electrical bias. As a result of investigations, it is established that a part of the active layer of finite thickness adjoining the substrate plays an important role in the charge carrier transmission process depending on the concentration of deep-level centers in the substrate. Irradiation by high doses leads to degradation of VACs and increase in the spectral density of the sensor noise. Low gamma radiation doses have a stabilization effect on the sensors. Periodic relaxation processes are observed for a part of the structures manufactured by the VPE method. The assumption is made that they can be caused by the deep-level centersin GaAs.