Quasi-streamer mode of delayed avalanche breakdown initiated by technological imperfections

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Ivanov, M.S.^1,2 ; Podolska, N.I.^2,3 ; Rodin, P.B.^2

Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg

195251, Russia^1

Ioffe Institute, 26 Politechnicheskaya str., St. Petersburg

194021, Russia^2

Saint-Petersburg Branch of the Joint Supercomputer Centre, 26 Politechnicheskaya str., St. Petersburg

194021, Russia^3

关键词: Avalanche breakdown;    Current localization;    Deep level centers;    Inhomogeneities;    Ionization process;    Picosecond range;    Relative amplitude;    Spatially inhomogeneous;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012033/pdf
DOI  :  10.1088/1742-6596/816/1/012033

来源: IOP

【 摘 要 】

Numerical simulations of spatially non-uniform picosecond-range switching of high-voltage silicon diodes with technological imperfections have been performed. It is shown that spatially inhomogeneous distribution of process-induced deep-level centers that trigger ionization process easily provoke current localization. A fluctuation of concentration with a relative amplitude of 10% leads to almost complete localization of current. The switching time sharply decreases (from ∼100 ps to ∼10 ps) with the increase of the amplitude of the inhomogeneity and the decrease of its size.