SPICE-aided modeling of high-voltage silicon carbide JFETs

39th International Microelectronics and Packaging IMAPS Poland 2015 Conference

无线电电子学

Bargiel, Kamil^1 ; Zarbski, Janusz^1 ; Bisewski, Damian^1

Gdynia Maritime University, Dept. of Marine Electronics, Morska 83, Gdynia

81-225, Poland^1

关键词: High voltage;    Model parameters;    SiC transistors;    Static characteristic;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/104/1/012014/pdf
DOI  :  10.1088/1757-899X/104/1/012014

来源: IOP

【 摘 要 】

The paper presents the static characteristics of the SiC transistor SJEP170R550 offered by SemiSouth obtained from simulations using JFET model built-in in PSPICE. Values of the model parameters were estimated using MODEL EDITOR, as well as procedure described in the literature. Simulation results were verified experimentally by comparison of results of measurements.