A New Strained-Si Channel High Voltage MOSFET for High Performance Power Applications

ETRI Journal

关键词: breakdown voltage;    hot electron;    strained-Si;    power device;    High voltage;   

Others  :  1185456
DOI  :  10.4218/etrij.06.0205.0067

【 摘 要 】

We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a 0.75 μm thick Si0.8Ge0.2 buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8%, respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.

   

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