Composition control of PZT thin films by varying technological parameters of RF magnetron sputter deposition

24th International Conference on Vacuum Technique and Technology

Pronin, V.P.^1 ; Dolgintsev, D.M.^1 ; Pronin, I.P.^2 ; Senkevich, S.V.^2 ; Kaptelov, E. Yu.^2 ; Sergienko, A. Yu.^3

Faculty of Physics, Herzen State Pedagogical University, Kazanskaya (Plekhanova) ul. 6, St.-Petersburg

191186, Russia^1

Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg

194021, Russia^2

Institute of Education Management, Russian Academy of Education, ul. Chernyakhovskogo 2, St. Petersburg

191119, Russia^3

关键词: Composition control;    Morphotropic phase boundaries;    PZT thin film;    RF magnetron sputter depositions;    rf-Magnetron sputtering;    Technological parameters;    Thin film ferroelectrics;    Thin layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/872/1/012022/pdf
DOI  :  10.1088/1742-6596/872/1/012022

来源: IOP

【 摘 要 】

The article presents the effect of technological parameters of RF magnetron sputtering on the concentration of components of thin-film ferroelectric structures based on lead zirconate titanate PZT in the region of the morphotropic phase boundary. It is shown that by changing the distance from the target to the substrate and the pressure of the working gas mixture Ar + O2, it is possible to vary the composition of the deposited thin layers.